Effects of Interfacial Charge Depletion in Organic Thin-Film Transistors with Polymeric Dielectrics on Electrical Stability
نویسندگان
چکیده
We investigated the electrical stabilities of two types of pentacene-based organic thin-film transistors (OTFTs) with two different polymeric dielectrics: polystyrene (PS) and poly(4-vinyl phenol) (PVP), in terms of the interfacial charge depletion. Under a short-term bias stress condition, the OTFT with the PVP layer showed a substantial increase in the drain current and a positive shift of the threshold voltage, while the PS layer case exhibited no change. Furthermore, a significant increase in the off-state current was observed in the OTFT with the PVP layer which has a hydroxyl group. In the presence of the interfacial hydroxyl group in PVP, the holes are not fully depleted during repetitive operation of the OTFT with the PVP layer and a large positive gate voltage in the off-state regime is needed to effectively refresh the electrical characteristics. It is suggested that the depletion-limited holes at the interface, i.e., interfacial charge depletion, between the PVP layer and the pentacene layer play a critical role on the electrical stability during operation of the OTFT.
منابع مشابه
Organic Thin Film Transistors with Polyvinylpyrrolidone / Nickel Oxide Sol-Gel Derived Nanocomposite Insulator
Polyvinylpyrrolidone / Nickel oxide (PVP/NiO) dielectrics were fabricated with sol-gel method using 0.2 g of PVP at different working temperatures of 80, 150 and 200 ºC. Structural properties and surface morphology of the hybrid films were investigated by X- Ray diffraction (XRD) and Scanning Electron Microscope (SEM) respectively. Energy dispersive X-ray spec...
متن کاملProcess Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays
Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed. The p...
متن کاملEffects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics
Article history: Received 23 May 2015 Accepted 16 June 2015 Available online xxxx Weperformed thermal and constant voltage stress on oligothiophene-based p-type organic thin-film-transistors. The devices subjected to thermal stress without bias showed limited variations. The bias stress performed at 20 °C inducedmonotonic charge trapping, andmobility degradation. The devices subjected to simult...
متن کاملStudy of the Characteristics of Organic Thin Film Transistors with Plasma-Polymer Gate Dielectrics
The effects of gate dielectrics material in organic thin film transistors (OTFTs) were investigated. The gate dielectrics were deposited by plasma enhanced chemical vapor deposition (PECVD) with cyclohexane and tetraethylorthosilane (TEOS) respectively used as organic and inorganic precursors. The gate dielectrics (gate insulators) were deposited as either organic plasma-polymer or organic–inor...
متن کاملBias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics
The bias stability of zinc-tin-oxide ZTO thin-film transistors TFTs with either Al2O3 gate dielectrics deposited via atomic layer deposition ALD or SiO2 gate dielectrics deposited via plasma-enhanced chemical vapor deposition PECVD was compared. Both device types showed incremental mobility 11 cm2 /V s, subthreshold slopes 0.4 V /dec, and ION / IOFF ratios of 107. During repeated ID-VGS sweepin...
متن کامل